Infineon OptiMOS Type N-Channel MOSFET, 4.7 A, 600 V Enhancement, 3-Pin PG-TO252-3

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$10.98

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$12.08

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Per unit
Per Pack*
10 - 40$1.098$10.98
50 - 90$0.927$9.27
100 - 240$0.864$8.64
250 - 990$0.847$8.47
1000 +$0.831$8.31

*price indicative

RS Stock No.:
273-3010
Mfr. Part No.:
IPD60R1K0PFD7SAUMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.7A

Maximum Drain Source Voltage Vds

600V

Package Type

PG-TO252-3

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

26W

Typical Gate Charge Qg @ Vgs

6nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon 600V cool MOS PFD7 super junction MOSFET complements the cool MOS 7 offering for consumer applications. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD pac

BOM cost reduction and easy manufacturing

Robustness and reliability

Easy to select the right parts for design fine-tuning

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