Infineon OptiMOS Type N-Channel MOSFET, 4.7 A, 600 V Enhancement, 3-Pin PG-TO252-3

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 10 units)*

$10.39

(exc. GST)

$11.43

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • Plus 2,490 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 40$1.039$10.39
50 - 90$0.877$8.77
100 - 240$0.817$8.17
250 - 990$0.801$8.01
1000 +$0.786$7.86

*price indicative

RS Stock No.:
273-3010
Mfr. Part No.:
IPD60R1K0PFD7SAUMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.7A

Maximum Drain Source Voltage Vds

600V

Package Type

PG-TO252-3

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

6nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

26W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon 600V cool MOS PFD7 super junction MOSFET complements the cool MOS 7 offering for consumer applications. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD pac

BOM cost reduction and easy manufacturing

Robustness and reliability

Easy to select the right parts for design fine-tuning

Related links