Renesas Electronics NP100P06PDG Type P-Channel MOSFET, 100 A, 60 V P, 4-Pin MP-25ZP (TO-263)
- RS Stock No.:
- 264-1238
- Mfr. Part No.:
- NP100P06PDG-E1-AY
- Brand:
- Renesas Electronics
This image is representative of the product range
Subtotal (1 tube of 800 units)*
$3,984.80
(exc. GST)
$4,383.20
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Temporarily out of stock
- Shipping from 18 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 800 + | $4.981 | $3,984.80 |
*price indicative
- RS Stock No.:
- 264-1238
- Mfr. Part No.:
- NP100P06PDG-E1-AY
- Brand:
- Renesas Electronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | MP-25ZP (TO-263) | |
| Series | NP100P06PDG | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 5.1mΩ | |
| Channel Mode | P | |
| Maximum Power Dissipation Pd | 200W | |
| Typical Gate Charge Qg @ Vgs | 300nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type MP-25ZP (TO-263) | ||
Series NP100P06PDG | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 5.1mΩ | ||
Channel Mode P | ||
Maximum Power Dissipation Pd 200W | ||
Typical Gate Charge Qg @ Vgs 300nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The Renesas Electronics provides a low voltage power with P-channel type MOS Field Effect Transistor which is designed for high current switching applications. It consist of a 100 A maximum drain current.
Maximum drain source voltage is 60 V
Mounting type is surface mount
Related links
- Renesas P-Channel MOSFET 60 V NP100P06PDG-E1-AY
- Renesas P-Channel MOSFET 60 V, 3-Pin TO-220FM 2SJ534-E
- Renesas P-Channel MOSFET 60 V, 4-Pin IPAK 2SJ600-AZ
- Renesas P-Channel MOSFET 60 V, 3-Pin DPAK-L 2SJ529L-E
- Renesas P-Channel MOSFET 60 V, 4-Pin IPAK 2SJ598-AZ
- Infineon P-Channel MOSFET 60 V, 3-Pin D2PAK IPB110P06LMATMA1
- Vishay N-Channel MOSFET 60 V, 3-Pin DPAK SQD50034E_GE3
- Vishay N-Channel MOSFET 60 V, 3-Pin D2PAK SQM50034E_GE3
