Infineon HEXFET Type N-Channel MOSFET, 1.9 A, 150 V Enhancement, 8-Pin SO-8 IRF7465TRPBF

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Subtotal (1 pack of 25 units)*

$16.80

(exc. GST)

$18.475

(inc. GST)

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Units
Per unit
Per Pack*
25 - 25$0.672$16.80
50 - 75$0.659$16.48
100 - 475$0.605$15.13
500 - 1975$0.55$13.75
2000 +$0.539$13.48

*price indicative

Packaging Options:
RS Stock No.:
262-6736
Distrelec Article No.:
304-41-668
Mfr. Part No.:
IRF7465TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.9A

Maximum Drain Source Voltage Vds

150V

Package Type

SO-8

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2.5W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

10nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5mm

Height

1.75mm

Automotive Standard

No

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.

Fully characterized avalanche voltage and current

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