Infineon HEXFET Type N-Channel MOSFET, 3.6 A, 150 V Enhancement, 8-Pin SO-8 IRF7451TRPBF

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Subtotal (1 pack of 10 units)*

$13.13

(exc. GST)

$14.44

(inc. GST)

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Per unit
Per Pack*
10 - 40$1.313$13.13
50 - 90$1.167$11.67
100 - 490$1.052$10.52
500 - 1990$0.957$9.57
2000 +$0.939$9.39

*price indicative

Packaging Options:
RS Stock No.:
262-6734
Mfr. Part No.:
IRF7451TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.6A

Maximum Drain Source Voltage Vds

150V

Package Type

SO-8

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2.5W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

28nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5mm

Height

1.75mm

Width

4 mm

Automotive Standard

No

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.

Fully characterized avalanche voltage and current

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