Dual SiC N-Channel MOSFET, 191 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB014N04NF2SATMA1
- RS Stock No.:
- 262-5850
- Mfr. Part No.:
- IPB014N04NF2SATMA1
- Brand:
- Infineon
795 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (In a Pack of 5)
$2.832
(exc. GST)
$3.115
(inc. GST)
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | $2.832 | $14.16 |
| 25 - 45 | $1.914 | $9.57 |
| 50 - 95 | $1.88 | $9.40 |
| 100 - 245 | $1.54 | $7.70 |
| 250 + | $1.51 | $7.55 |
*price indicative
- RS Stock No.:
- 262-5850
- Mfr. Part No.:
- IPB014N04NF2SATMA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.
Pb-free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
RoHS compliant
Halogen free according to IEC61249-2-21
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 191 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | PG-TO263-3 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Channel Mode | Enhancement |
| Transistor Material | SiC |
| Number of Elements per Chip | 2 |
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