Infineon IQE N-Channel MOSFET, 205 A, 40 V Enhancement, 9-Pin WHTFN IQE013N04LM6CGSCATMA1
- RS Stock No.:
- 260-1077
- Mfr. Part No.:
- IQE013N04LM6CGSCATMA1
- Brand:
- Infineon
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | $5.355 | $10.71 |
| 10 - 98 | $4.82 | $9.64 |
| 100 - 248 | $4.335 | $8.67 |
| 250 - 498 | $3.905 | $7.81 |
| 500 + | $3.52 | $7.04 |
*price indicative
- RS Stock No.:
- 260-1077
- Mfr. Part No.:
- IQE013N04LM6CGSCATMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 205A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | WHTFN | |
| Series | IQE | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 1.35mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 205A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type WHTFN | ||
Series IQE | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 1.35mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon IQE Series MOSFET, 40V Maximum Drain-Source Voltage, 205A Maximum Continuous Drain Current - IQE013N04LM6CGSCATMA1
This n-channel enhancement MOSFET is a surface-mount power device designed for high-current switching in Compact assemblies. It operates across a wide temperature range for harsh environments and provides a low on-state resistance for efficient power conversion. The device is supplied in a WHTFN package with multiple pins to support thermal and current handling in dense layouts.
Features and Benefits:
• 1.35mΩ Rds(on) reduces conduction losses and improves efficiency
• 205A continuous current supports heavy-load power switching
• 40V drain-source voltage enables mid-voltage system use
• 1V forward voltage lowers losses in diode conduction paths
• -55°C to +175°C operation extends use in extreme temperatures
• 205A continuous current supports heavy-load power switching
• 40V drain-source voltage enables mid-voltage system use
• 1V forward voltage lowers losses in diode conduction paths
• -55°C to +175°C operation extends use in extreme temperatures
Applications
• Suitable for DC-DC converters in power management systems
• Ideal for high-current motor-drive stages in Compact modules
• Used with power distribution arrays requiring low resistance
• Can be used for battery protection and high-current switching
• Ideal for high-current motor-drive stages in Compact modules
• Used with power distribution arrays requiring low resistance
• Can be used for battery protection and high-current switching
What package type does it use and why is that relevant?
It is supplied in a WHTFN package which aids surface-mount assembly and supports thermal dissipation through multiple pins.
How does the channel configuration affect switching?
The device uses an n-channel enhancement mode, enabling low-side switching with low gate-drive requirements for efficient control.
Is it intended for automotive standards compliance?
It is not specified as meeting automotive standards and should be evaluated for vehicle-grade use accordingly.
Related links
- Infineon IQE Type N-Channel MOSFET 40 V Enhancement, 9-Pin WHTFN
- Infineon IQE Type N-Channel MOSFET 40 V Enhancement, 8-Pin WHSON
- Infineon IQE Type N-Channel MOSFET 40 V Enhancement, 8-Pin WHSON IQE013N04LM6SCATMA1
- Infineon IQE Type N-Channel MOSFET 40 V TTFN
- Infineon IQE Type N-Channel MOSFET 40 V TTFN IQE013N04LM6CGATMA1
- Infineon IQE Type N-Channel MOSFET, 205 A TSON
- Infineon IQE Type N-Channel MOSFET, 205 A TSON IQE013N04LM6ATMA1
- Infineon IQE Type N-Channel MOSFET 25 V Enhancement, 24-Pin TSDSO