Infineon HEXFET Type N-Channel MOSFET, 180 A, 30 V WDSON

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Subtotal (1 reel of 4800 units)*

$7,056.00

(exc. GST)

$7,776.00

(inc. GST)

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  • Shipping from 08 April 2026
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Units
Per unit
Per Reel*
4800 - 4800$1.47$7,056.00
9600 - 9600$1.323$6,350.40
14400 +$1.191$5,716.80

*price indicative

RS Stock No.:
258-3966
Mfr. Part No.:
IRF6727MTRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

30V

Package Type

WDSON

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

2.4mΩ

Forward Voltage Vf

0.77V

Typical Gate Charge Qg @ Vgs

49nC

Maximum Power Dissipation Pd

89W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

High-current rating

Dual-side cooling capability

Low package height of 0.7mm

Compact form factor

High efficiency

Environmentally friendly

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