Infineon IPD Type P-Channel MOSFET, -73 A, -40 V Enhancement, 3-Pin TO-252 IPD70P04P409ATMA2
- RS Stock No.:
- 258-3862
- Mfr. Part No.:
- IPD70P04P409ATMA2
- Brand:
- Infineon
This image is representative of the product range
Subtotal (1 pack of 2 units)*
$6.41
(exc. GST)
$7.05
(inc. GST)
FREE delivery for orders over $80.00 ex GST
- 2,222 unit(s) ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | $3.205 | $6.41 |
| 10 - 98 | $2.88 | $5.76 |
| 100 - 248 | $2.335 | $4.67 |
| 250 - 498 | $2.32 | $4.64 |
| 500 + | $1.915 | $3.83 |
*price indicative
- RS Stock No.:
- 258-3862
- Mfr. Part No.:
- IPD70P04P409ATMA2
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -73A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Forward Voltage Vf | -1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 75W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -73A | ||
Maximum Drain Source Voltage Vds -40V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Forward Voltage Vf -1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 75W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1, RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IPD Series MOSFET, 75W Power Dissipation -40V Drain-Source Voltage - IPD70P04P409ATMA2
Features and Benefits:
• -73A continuous drain current supports heavy current demands
• 75W power dissipation allows sustained power handling
• 54 nC typical gate charge enables predictable switching behaviour
• TO‑252 package facilitates Compact surface mounting
Applications
• Ideal for reverse‑polarity protection in power rails
• Used with power‑management circuits in vehicular electronics
• Can be used for synchronous control in DC power stages
• Suitable for thermally stable designs across wide temperature ranges
What voltage rating applies between drain and source?
What gate voltage limits must be observed to avoid damage?
How does the package affect PCB assembly?
What thermal extremes can the device tolerate during operation?
Related links
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252 IPD50P04P4L11ATMA2
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 IPD50P04P413ATMA2
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252 IPD90P04P4L04ATMA2
