N-Channel MOSFET, 18 A, 1200 V, 7-Pin D2PAK Infineon IMBG120R220M1HXTMA1

The Infineon silicon carbide MOSFET reduction of system complexity. It directly drive from fly-back controller. Efficiency improvement and cooling effort reduction. Enabling higher frequency.

Very low switching losses
Short circuit withstand time 3 μs
Fully controllable dV/dt
Benchmark gate threshold voltage, VGS(th) = 4.5V
Robust against parasitic turn on, 0V turn-off gate voltage can be applied
Robust body diode for hard commutation
XT interconnection technology for best-in-class thermal performance
Package creepage and clearance distance > 6.1mm
Sense pin for optimized switching performance

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