Infineon HEXFET Type N-Channel MOSFET, 110 A, 60 V TO-263

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 reel of 800 units)*

$1,169.60

(exc. GST)

$1,286.40

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 31 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
800 - 1600$1.462$1,169.60
2400 - 4000$1.308$1,046.40
4800 +$1.295$1,036.00

*price indicative

RS Stock No.:
257-9439
Mfr. Part No.:
IRFS7540TRLPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

5.1mΩ

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

88nC

Maximum Power Dissipation Pd

160W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRFS series is the 60V single n channel HEXFET power mosfet in a Lead Free D2 Pak package.

Product qualification according to JEDEC standard

Optimized for 10 V gate drive voltage (called normal level)

Silicon optimized for applications switching below 100 kHz

Softer body diode compared to previous silicon generation

Industry standard surface mount power package

Capable of being wave soldered

Related links