N-Channel MOSFET, 33 A, 650 V, 7-Pin D2PAK Infineon IMBG65R072M1HXTMA1
- RS Stock No.:
- 248-9321
- Mfr. Part No.:
- IMBG65R072M1HXTMA1
- Brand:
- Infineon
Available for back order.
Price (ex. GST) Each
$13.75
(exc. GST)
$15.13
(inc. GST)
Units | Per unit |
|---|---|
| 1 - 9 | $13.75 |
| 10 - 99 | $12.37 |
| 100 - 249 | $11.13 |
| 250 - 499 | $10.03 |
| 500 + | $9.02 |
- RS Stock No.:
- 248-9321
- Mfr. Part No.:
- IMBG65R072M1HXTMA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
The Infineon SiC MOSFET is a 650 V CoolSiC is built over the solid silicon carbide technology, leveraging the wide bandgap SiC material characteristics, the 650 V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use, suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.
Optimized switching behaviour at higher currents
Commutation robust fast body diode with low Qf
Superior gate oxide reliability
Tj,max-175°C and excellent thermal behaviour
Lower RDS(on) and pulse current dependency on temperature
Increased avalanche capability
Compatible with standard drivers
Kelvin source provides upto 4 times lower switching losses
Commutation robust fast body diode with low Qf
Superior gate oxide reliability
Tj,max-175°C and excellent thermal behaviour
Lower RDS(on) and pulse current dependency on temperature
Increased avalanche capability
Compatible with standard drivers
Kelvin source provides upto 4 times lower switching losses
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 33 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-263-7 |
| Mounting Type | Surface Mount |
| Pin Count | 7 |
| Number of Elements per Chip | 1 |
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