Infineon IPD Type N-Channel MOSFET, 180 A, 40 V P, 3-Pin TO-252 IPD80R1K2P7ATMA1

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Subtotal (1 pack of 5 units)*

$9.46

(exc. GST)

$10.405

(inc. GST)

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Per unit
Per Pack*
5 - 5$1.892$9.46
10 - 95$1.848$9.24
100 - 245$1.806$9.03
250 - 495$1.764$8.82
500 +$1.722$8.61

*price indicative

Packaging Options:
RS Stock No.:
244-1596
Mfr. Part No.:
IPD80R1K2P7ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

P

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon MOSFET 800V CoolMOS™ P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.

Best-in-class FOM RDS(on) * Eoss

Best-in-class DPAK RDS(on)

Best-in-class V(GS)th of 3V

Fully optimized portfolio

Integrated Zener Diode ESD protection

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