Infineon IPD Type N-Channel MOSFET, 180 A, 40 V P, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

$1,845.00

(exc. GST)

$2,030.00

(inc. GST)

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Units
Per unit
Per Reel*
2500 - 2500$0.738$1,845.00
5000 - 5000$0.72$1,800.00
7500 +$0.703$1,757.50

*price indicative

RS Stock No.:
244-1595
Mfr. Part No.:
IPD80R1K2P7ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

40V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

P

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon MOSFET 800V CoolMOS™ P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.

Best-in-class FOM RDS(on) * Eoss

Best-in-class DPAK RDS(on)

Best-in-class V(GS)th of 3V

Fully optimized portfolio

Integrated Zener Diode ESD protection

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