Nexperia Type N-Channel MOSFET, 12.7 A, 30 V Enhancement, 8-Pin MLPAK33

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Subtotal (1 reel of 3000 units)*

$1,164.00

(exc. GST)

$1,281.00

(inc. GST)

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  • Shipping from 08 July 2026
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Units
Per unit
Per Reel*
3000 - 3000$0.388$1,164.00
6000 - 27000$0.378$1,134.00
30000 +$0.34$1,020.00

*price indicative

RS Stock No.:
240-1993
Mfr. Part No.:
PXN6R7-30QLJ
Brand:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

12.7A

Maximum Drain Source Voltage Vds

30V

Package Type

MLPAK33

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

13.6mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

12.5W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Nexperia N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic-level compatible

Trench MOSFET technology

Ultra low QG and QGD for high system efficiency, especially at higher switching frequencies

Superfast switching with soft-recovery

Low spiking and ringing for low EMI designs

MLPAK33 package (3.3 x 3.3 mm footprint)

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