Vishay SiR588DP N-Channel MOSFET, 59.5 A, 80 V, 8-Pin PowerPAK SO-8 SiR588DP-T1-RE3

RS Stock No.:: 239-5393
Mfr. Part No.:: SiR588DP-T1-RE3
Brand:: Vishay

Vishay SiR588DP N-Channel MOSFET, 59.5 A, 80 V, 8-Pin PowerPAK SO-8 SiR588DP-T1-RE3

This image is representative of the product range

Bulk discount available

View bulk pricing options

Subtotal (1 reel of 3000 units)*

$2,238.00

(exc. GST)

$2,463.00

(inc. GST)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Reel*
3000 - 12000	$0.746	$2,238.00
15000 +	$0.671	$2,013.00

*price indicative

RS Stock No.:: 239-5393
Mfr. Part No.:: SiR588DP-T1-RE3
Brand:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	59.5A
	Maximum Drain Source Voltage Vds	80V
	Package Type	PowerPAK SO-8
	Series	SiR588DP
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.008Ω
	Typical Gate Charge Qg @ Vgs	14.2nC
	Forward Voltage Vf	1.1V
	Maximum Power Dissipation Pd	59.5W
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	5.15mm
	Standards/Approvals	RoHS
	Length	6.15mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 59.5A
	Maximum Drain Source Voltage Vds 80V
	Package Type PowerPAK SO-8
	Series SiR588DP
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.008Ω
	Typical Gate Charge Qg @ Vgs 14.2nC
	Forward Voltage Vf 1.1V
	Maximum Power Dissipation Pd 59.5W
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 5.15mm
	Standards/Approvals RoHS
	Length 6.15mm
	Automotive Standard No

Datasheet - SiR588DP-T1-RE3

Vishay SiR588DP Series MOSFET, 80V Drain Source Voltage, 59.5A Continuous Drain Current - SiR588DP-T1-RE3

This n‑channel power MOSFET is designed for high-current switching in surface-mount power electronics. It operates across a wide temperature range and suits demanding thermal environments while providing low conduction losses and efficient gate control for fast-switching applications.

Features and Benefits:

• Very low on‑resistance reduces conduction losses and heat
• High continuous drain current supports heavy-load switching
• 80V drain-source rating enables medium-voltage designs
• Moderate gate charge allows efficient switching control
• Substantial power-dissipation capacity improves thermal margin

Applications

• Suitable for DC-DC converters in power management
• Ideal for motor-drive inverter stages
• Used with power supplies for server and telecom equipment
• Can be used for battery management and charging systems

What package type does it use and why does that matter?

It is supplied in a PowerPAK SO‑8 package which offers a compact surface-mount footprint and improved thermal contact for dissipating heat on densely populated boards.

How does the device behave across temperature extremes?

It is rated to operate from -55 °C up to 150 °C, allowing use in both cold-start conditions and high-temperature enclosures while maintaining specified electrical performance.

What gate-drive constraints should be observed?

The maximum gate-source voltage is 20V so gate-drive circuits must be limited to this value to prevent gate overstress.

What electrical characteristics affect switching efficiency?

Low drain-source resistance together with a typical gate charge of 14.2 nC determine conduction losses and switching energy, influencing overall system efficiency.