Vishay SiR Type N-Channel MOSFET, 116 A, 80 V, 8-Pin PowerPAK SO-8 SiR582DP-T1-RE3

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$18.96

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$20.855

(inc. GST)

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Per unit
Per Pack*
5 - 45$3.792$18.96
50 - 95$3.676$18.38
100 - 245$3.564$17.82
250 - 995$3.454$17.27
1000 +$3.346$16.73

*price indicative

Packaging Options:
RS Stock No.:
239-5387
Mfr. Part No.:
SiR582DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

116A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK SO-8

Series

SiR

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0034Ω

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

33.5nC

Maximum Power Dissipation Pd

92.5W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.15mm

Standards/Approvals

RoHS

Width

5.15 mm

The Vishay TrenchFET N channel power MOSFET has drain current of 116 A. It is used in synchronous rectification, primary side switch, DC/DC converter and motor drive switch.

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

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