Infineon OptiMOS™ Type N-Channel MOSFET, 237 A, 120 V, 8-Pin HSOF-8 IPT030N12N3GATMA1

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Subtotal (1 pack of 2 units)*

$18.62

(exc. GST)

$20.48

(inc. GST)

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  • 1,872 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8$9.31$18.62
10 - 98$9.035$18.07
100 - 248$8.76$17.52
250 - 498$8.50$17.00
500 +$8.255$16.51

*price indicative

Packaging Options:
RS Stock No.:
236-3670
Mfr. Part No.:
IPT030N12N3GATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

237A

Maximum Drain Source Voltage Vds

120V

Series

OptiMOS™

Package Type

HSOF-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3mΩ

Maximum Power Dissipation Pd

375W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

158nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

2.4mm

Length

10.1mm

Width

10.58 mm

Automotive Standard

No

The Infineon OptiMOS power MOSFET is the Ideal fit for battery-powered equipment, with optimal balance between additional voltage breakdown margin and low on-state resistance. It is used in light electric vehicle, low voltage drives and battery powered tools.

High power density and improved thermal management

Less board space needed

High system efficiency and less paralleling required

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