Infineon OptiMOS™ Type N-Channel MOSFET, 237 A, 120 V, 8-Pin HSOF-8 IPT030N12N3GATMA1

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Subtotal (1 reel of 2000 units)*

$9,328.00

(exc. GST)

$10,260.00

(inc. GST)

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  • Shipping from 09 June 2026
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Units
Per unit
Per Reel*
2000 - 2000$4.664$9,328.00
4000 - 4000$4.485$8,970.00
6000 +$4.428$8,856.00

*price indicative

RS Stock No.:
236-3669
Mfr. Part No.:
IPT030N12N3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

237A

Maximum Drain Source Voltage Vds

120V

Package Type

HSOF-8

Series

OptiMOS™

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3mΩ

Typical Gate Charge Qg @ Vgs

158nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

375W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Height

2.4mm

Standards/Approvals

No

Width

10.58 mm

Length

10.1mm

Automotive Standard

No

The Infineon OptiMOS power MOSFET is the Ideal fit for battery-powered equipment, with optimal balance between additional voltage breakdown margin and low on-state resistance. It is used in light electric vehicle, low voltage drives and battery powered tools.

High power density and improved thermal management

Less board space needed

High system efficiency and less paralleling required

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