Infineon IPT Type N-Channel MOSFET, 333 A, 80 V, 8-Pin HSOF-8 IPT013N08NM5LFATMA1

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$11.02

(exc. GST)

$12.12

(inc. GST)

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1 - 9$11.02
10 - 99$10.80
100 - 249$10.58
250 - 499$10.36
500 +$10.14

*price indicative

Packaging Options:
RS Stock No.:
236-1587
Mfr. Part No.:
IPT013N08NM5LFATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

333A

Maximum Drain Source Voltage Vds

80V

Package Type

HSOF-8

Series

IPT

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.3mΩ

Maximum Power Dissipation Pd

278W

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

158nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

2.4mm

Length

10.1mm

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS 5 Linear FET, 80 V MOSFET . This product is fully qualified according to JEDEC for industrial applications .

Ideal for hot-swap and e-fuse applications

Very low on-resistance RDS(on)

Wide safe operating area SOA

N-channel, normal level

100% avalanche tested

Pb-free plating, halogen-free

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