Silicon P-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 Toshiba SSM3J356R,LF(T
- RS Stock No.:
- 236-3572
- Mfr. Part No.:
- SSM3J356R,LF(T
- Brand:
- Toshiba
Available for back order.
Price (ex. GST) Each (On a Reel of 3000)
$0.145
(exc. GST)
$0.159
(inc. GST)
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 12000 | $0.145 | $435.00 |
| 15000 + | $0.13 | $390.00 |
*price indicative
- RS Stock No.:
- 236-3572
- Mfr. Part No.:
- SSM3J356R,LF(T
- Brand:
- Toshiba
Technical data sheets
Legislation and Compliance
Product Details
The Toshiba field effect transistor made up of the silicon material and having P channel MOS type. It is mainly used in power management switching applications.
Storage temperature range −55 to 150 °C
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 2 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 4e+008 Ω |
| Maximum Gate Threshold Voltage | 2V |
| Transistor Material | Silicon |
| Number of Elements per Chip | 1 |
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