Infineon IPD Type P-Channel MOSFET, 22 A, 100 V Enhancement, 3-Pin TO-252 IPD11DP10NMATMA1
- RS Stock No.:
- 235-4853
- Mfr. Part No.:
- IPD11DP10NMATMA1
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
$16.27
(exc. GST)
$17.895
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- 2,050 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | $3.254 | $16.27 |
| 10 - 95 | $3.194 | $15.97 |
| 100 - 245 | $3.13 | $15.65 |
| 250 - 495 | $3.068 | $15.34 |
| 500 + | $3.012 | $15.06 |
*price indicative
- RS Stock No.:
- 235-4853
- Mfr. Part No.:
- IPD11DP10NMATMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 111mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | -59nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Height | 2.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 111mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs -59nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Height 2.41mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ P-Channel MOSFETs 100V in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy Interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. It is used in Battery management, Industrial automation.
Available in 4 different packages
Wide range
Normal level and logic level availability
Ideal for high and low switching frequency
Easy Interface to MCU
Low design complexity
Related links
- Infineon P-Channel MOSFET Transistor 100 V, 3-Pin DPAK IPD11DP10NMATMA1
- Infineon P-Channel MOSFET Transistor 100 V, 3-Pin DPAK IPD19DP10NMATMA1
- Infineon P-Channel MOSFET Transistor 100 V, 3-Pin DPAK IPD18DP10LMATMA1
- Infineon P-Channel MOSFET Transistor 150 V, 3-Pin DPAK IPD42DP15LMATMA1
- Infineon P-Channel MOSFET 60 V, 3-Pin DPAK IPD650P06NMATMA1
- Infineon P-Channel MOSFET Transistor 100 V, 3-Pin SOT-223 ISP20EP10LMXTSA1
- Infineon P-Channel MOSFET Transistor 100 V, 3-Pin SOT-223 ISP98DP10LMXTSA1
- Infineon P-Channel MOSFET Transistor 100 V, 3-Pin SOT-223 ISP16DP10LMXTSA1