ROHM Type N-Channel MOSFET, 4 A, 650 V Enhancement, 3-Pin TO-252 R6504END3TL1

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Subtotal (1 pack of 5 units)*

$15.19

(exc. GST)

$16.71

(inc. GST)

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Orders below $60.00 (exc. GST) cost $12.95.
Last RS stock
  • Final 90 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
5 - 45$3.038$15.19
50 - 95$2.986$14.93
100 - 245$2.934$14.67
250 - 995$2.878$14.39
1000 +$2.826$14.13

*price indicative

Packaging Options:
RS Stock No.:
235-2681
Mfr. Part No.:
R6504END3TL1
Brand:
ROHM
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Brand

ROHM

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.05Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

58W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

15nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.4mm

Width

2.4 mm

Height

10.4mm

Standards/Approvals

No

Automotive Standard

No

The ROHM R6xxxENx series are low-noise products, super Junction MOSFET, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.

Low on-resistance

Fast switching speed

Parallel use is easy

Pb-free plating

RoHS compliant

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