N-Channel MOSFET, 108 A, 200 V, 8-Pin PG HSOG-8 (TOLG) Infineon IPTG111N20NM3FDATMA1

RS Stock No.:: 233-4388
Mfr. Part No.:: IPTG111N20NM3FDATMA1
Brand:: Infineon

N-Channel MOSFET, 108 A, 200 V, 8-Pin PG HSOG-8 (TOLG) Infineon IPTG111N20NM3FDATMA1

On back order for despatch 17/05/2024, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each (On a Reel of 1800)

$7.275

(exc. GST)

$8.003

(inc. GST)

Units	Per unit	Per Reel*
1800 - 7200	$7.275	$13,095.00
9000 +	$6.548	$11,786.40
*price indicative

RS Stock No.:: 233-4388
Mfr. Part No.:: IPTG111N20NM3FDATMA1
Brand:: Infineon

Technical data sheets

Datasheet - IPTG111N20NM3FDATMA1

Legislation and Compliance

Product Details

The Infineon OptiMOS power MOSFET IPTG111N20NM3FD comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 3 - 200 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board.

High efficiency and lower EMI
High performance capability

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	108 A
Maximum Drain Source Voltage	200 V
Package Type	PG HSOG-8 (TOLG)
Series	IPTG
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	0.0111 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Number of Elements per Chip	1

N-Channel MOSFET, 108 A, 200 V, 8-Pin PG HSOG-8 (TOLG) Infineon IPTG111N20NM3FDATMA1

Technical data sheets

Legislation and Compliance

Product Details

Specifications

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