N-Channel MOSFET, 58 A, 100 V, 8-Pin PQFN 3 x 3 Infineon ISZ0804NLSATMA1
- RS Stock No.:
- 232-6777
- Mfr. Part No.:
- ISZ0804NLSATMA1
- Brand:
- Infineon
4980 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (On a Reel of 5000)
$0.892
(exc. GST)
$0.981
(inc. GST)
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 20000 | $0.892 | $4,460.00 |
| 25000 + | $0.803 | $4,015.00 |
*price indicative
- RS Stock No.:
- 232-6777
- Mfr. Part No.:
- ISZ0804NLSATMA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
The Infineon's OptiMOS PD power MOSFET 100 V, are designed targeting USB-PD and adapter applications. It's PQFN 3.3x3.3 package offers fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.
Logic level availability
Excellent thermal behaviour
100% avalanche tested
Excellent thermal behaviour
100% avalanche tested
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 58 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | PQFN 3 x 3 |
| Series | OptiMOS™ 5 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 0.0115 O, 0.0155 O |
| Maximum Gate Threshold Voltage | 2.3V |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
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