onsemi NTMC0 2 Type P-Channel MOSFET, 4.5 A, 100 V Enhancement, 8-Pin SOIC
- RS Stock No.:
- 230-9091
- Mfr. Part No.:
- NTMC083NP10M5L
- Brand:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 2500 units)*
$1,665.00
(exc. GST)
$1,832.50
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Supply shortage
- 10,000 left, ready to ship from another location
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 5000 | $0.666 | $1,665.00 |
| 7500 - 35000 | $0.604 | $1,510.00 |
| 37500 + | $0.543 | $1,357.50 |
*price indicative
- RS Stock No.:
- 230-9091
- Mfr. Part No.:
- NTMC083NP10M5L
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOIC | |
| Series | NTMC0 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 83mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 5nC | |
| Maximum Power Dissipation Pd | 3.1W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOIC | ||
Series NTMC0 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 83mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 5nC | ||
Maximum Power Dissipation Pd 3.1W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ON Semiconductor dual n-channel and P- channel MOSFET which has drain to source voltage of 100 V. It is typically used synchronous rectification and DC-DC conversion.
Small Footprint (5 x 6 mm) for Compact Design
Low conduction loss
Low RDS(on) to Minimize Conduction Losses
Standard footprint
Low QG and Capacitance to Minimize Driver Losses
The Part is Not ESD Protected
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
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