onsemi SiC Power Type N-Channel MOSFET, 62 A, 650 V N, 7-Pin TO-263
- RS Stock No.:
- 229-6443
- Mfr. Part No.:
- NTBG045N065SC1
- Brand:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 800 units)*
$10,169.60
(exc. GST)
$11,186.40
(inc. GST)
FREE delivery for orders over $60.00 ex GST
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- Shipping from 28 April 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 1600 | $12.712 | $10,169.60 |
| 2400 - 3200 | $12.399 | $9,919.20 |
| 4000 + | $11.866 | $9,492.80 |
*price indicative
- RS Stock No.:
- 229-6443
- Mfr. Part No.:
- NTBG045N065SC1
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | SiC Power | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 4.8V | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 242W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.2mm | |
| Standards/Approvals | No | |
| Width | 4.7 mm | |
| Height | 9.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series SiC Power | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 4.8V | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 242W | ||
Maximum Operating Temperature 175°C | ||
Length 10.2mm | ||
Standards/Approvals No | ||
Width 4.7 mm | ||
Height 9.4mm | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
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