onsemi SiC Power Type N-Channel MOSFET, 55 A, 650 V N, 4-Pin TO-247 NTH4L045N065SC1
- RS Stock No.:
- 229-6460
- Mfr. Part No.:
- NTH4L045N065SC1
- Brand:
- onsemi
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$13.19
(exc. GST)
$14.51
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- 38 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 9 | $13.19 |
| 10 - 49 | $12.79 |
| 50 - 99 | $12.39 |
| 100 - 224 | $12.13 |
| 225 + | $11.86 |
*price indicative
- RS Stock No.:
- 229-6460
- Mfr. Part No.:
- NTH4L045N065SC1
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | SiC Power | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 4.4V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 187W | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 22.74mm | |
| Standards/Approvals | No | |
| Length | 15.8mm | |
| Width | 5.2 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series SiC Power | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 4.4V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 187W | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 22.74mm | ||
Standards/Approvals No | ||
Length 15.8mm | ||
Width 5.2 mm | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
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