Vishay TrenchFET Type N-Channel MOSFET, 18 A, 60 V Enhancement, 8-Pin PowerPAK 1212 SQS660CENW-T1_GE3
- RS Stock No.:
- 228-2968
- Mfr. Part No.:
- SQS660CENW-T1_GE3
- Brand:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
$13.13
(exc. GST)
$14.44
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Last RS stock
- Final 2,780 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | $1.313 | $13.13 |
| 50 - 90 | $1.274 | $12.74 |
| 100 - 240 | $1.236 | $12.36 |
| 250 - 990 | $1.20 | $12.00 |
| 1000 + | $1.164 | $11.64 |
*price indicative
- RS Stock No.:
- 228-2968
- Mfr. Part No.:
- SQS660CENW-T1_GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 62.5W | |
| Typical Gate Charge Qg @ Vgs | 17.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 62.5W | ||
Typical Gate Charge Qg @ Vgs 17.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET automotive N-channel is 60 V power MOSFET.
100 % Rg and UIS tested
Related links
- Vishay TrenchFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212 SQS414CENW-T1_GE3
- Vishay TrenchFET Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK 1212 SQSA70CENW-T1_GE3
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212 SQSA12CENW-T1_GE3
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212 SQS486CENW-T1_GE3