Infineon BSS123I Type N-Channel MOSFET, 190 mA, 100 V Depletion, 4-Pin SOT-223 BSS123IXTSA1

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Per unit
Per Pack*
100 - 100$0.092$9.20
200 - 200$0.089$8.90
300 - 300$0.087$8.70
400 - 400$0.084$8.40
500 +$0.082$8.20

*price indicative

Packaging Options:
RS Stock No.:
225-0557
Mfr. Part No.:
BSS123IXTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

190mA

Maximum Drain Source Voltage Vds

100V

Series

BSS123I

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

10Ω

Channel Mode

Depletion

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

0.63nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

0.5W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.7mm

Height

1.8mm

Width

3.7 mm

Distrelec Product Id

304-39-400

Automotive Standard

No

The Infineon BSS123I is the small signal, small power N- and P-channel MOSFETs provide a wide range of VGS(th) levels and RDS(on) values, as well as multiple voltage classes. This MOSFET have enhancement and depletion-mode options.

PCB-space and cost savings

Gate drive flexibility

Reduced design complexity

Environmentally friendly

High overall efficiency

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