Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V, 3-Pin TO-252

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Subtotal (1 reel of 3000 units)*

$6,903.00

(exc. GST)

$7,593.00

(inc. GST)

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3000 - 3000$2.301$6,903.00
6000 - 6000$2.259$6,777.00
9000 +$2.222$6,666.00

*price indicative

RS Stock No.:
223-8456
Mfr. Part No.:
AUIRFR5305TRL
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

65mΩ

Maximum Power Dissipation Pd

110W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

63nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon automotive qualified single P-channel HEXFET power MOSFET in a D2-pak package. The cellular design of power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. It is used in automotive and wide variety of applications because of fast switching speed and ruggedized device.

Advanced planar technology

Dynamic dV/dT rating

175°C operating temperature

Fast switching

Lead free

RoHS compliant

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