Infineon Dual FF6MR 1 Type N-Channel MOSFET, 250 A, 1200 V Enhancement AG-62MM FF6MR12KM1BOSA1

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Subtotal (1 unit)*

$1,517.47

(exc. GST)

$1,669.22

(inc. GST)

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  • 28 unit(s) ready to ship from another location
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Units
Per unit
1 - 9$1,517.47
10 - 99$1,490.15
100 - 249$1,463.32
250 - 499$1,436.99
500 +$1,411.12

*price indicative

Packaging Options:
RS Stock No.:
222-4796
Mfr. Part No.:
FF6MR12KM1BOSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

250A

Maximum Drain Source Voltage Vds

1200V

Package Type

AG-62MM

Series

FF6MR

Mount Type

Chassis

Maximum Drain Source Resistance Rds

5.81mΩ

Channel Mode

Enhancement

Forward Voltage Vf

5.85V

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

20mW

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Standards/Approvals

No

Number of Elements per Chip

1

Automotive Standard

No

The Infineon 62 mm 1200 V, 6 mΩ half bridge module with Cool Sic™ MOSFET.

High current density

Low switching losses

Superior gate oxide reliability

Highest robustness against humidity

Robust integrated body diode, and thus optimal thermal conditions

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