Infineon CoolMOS Type N-Channel MOSFET, 109 A, 600 V Enhancement, 4-Pin TO-247

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Subtotal (1 tube of 30 units)*

$582.27

(exc. GST)

$640.50

(inc. GST)

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In Stock
  • 90 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
30 - 60$19.409$582.27
90 - 120$18.887$566.61
150 +$18.497$554.91

*price indicative

RS Stock No.:
222-4726
Mfr. Part No.:
IPZ60R017C7XKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

109A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS

Package Type

TO-247

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

17mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

240nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

446W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

21.1mm

Width

5.21 mm

Length

16.13mm

Automotive Standard

No

The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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