Infineon CoolMOS Type N-Channel MOSFET, 31.2 A, 650 V Enhancement, 3-Pin TO-220 IPP65R110CFDAAKSA1

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Subtotal (1 pack of 2 units)*

$11.23

(exc. GST)

$12.352

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8$5.615$11.23
10 - 98$5.515$11.03
100 - 248$5.415$10.83
250 - 498$5.32$10.64
500 +$5.225$10.45

*price indicative

Packaging Options:
RS Stock No.:
222-4707
Mfr. Part No.:
IPP65R110CFDAAKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

31.2A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS

Package Type

TO-220

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

110nC

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

277.8W

Maximum Operating Temperature

150°C

Height

4.57mm

Width

15.95 mm

Length

10.36mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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