Infineon Dual CoolMOS 2 Type N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S4L22ATMA1

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Subtotal (1 pack of 10 units)*

$22.83

(exc. GST)

$25.11

(inc. GST)

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Units
Per unit
Per Pack*
10 - 10$2.283$22.83
20 - 90$2.242$22.42
100 - 240$2.202$22.02
250 - 490$2.162$21.62
500 +$2.123$21.23

*price indicative

Packaging Options:
RS Stock No.:
222-4681
Mfr. Part No.:
IPG20N10S4L22ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

Power Transistor

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

100V

Series

CoolMOS

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

21nC

Maximum Power Dissipation Pd

60W

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Transistor Configuration

Dual

Length

5.15mm

Standards/Approvals

AEC-Q101

Width

5.9 mm

Height

1mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)

MSL1 up to 260°C peak reflow AEC Q101 qualified

OptiMOS™ - power MOSFET for automotive applications

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