Dual N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON Infineon IPG20N06S2L65AATMA1
- RS Stock No.:
- 223-8519
- Mfr. Part No.:
- IPG20N06S2L65AATMA1
- Brand:
- Infineon
19985 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (On a Reel of 5000)
$0.682
(exc. GST)
$0.75
(inc. GST)
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 20000 | $0.682 | $3,410.00 |
| 25000 + | $0.614 | $3,070.00 |
*price indicative
- RS Stock No.:
- 223-8519
- Mfr. Part No.:
- IPG20N06S2L65AATMA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
The Infineon OptiMOS series dual N-channel MOSFET has drain to source voltage of 55 V. It has benefits of larger source lead frame connection for wire bonding and bond wire is 200um for up to 20A current.
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package
Ultra low Rds
100% Avalanche tested
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package
Ultra low Rds
100% Avalanche tested
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 20 A |
| Maximum Drain Source Voltage | 55 V |
| Series | OptiMOS™ |
| Package Type | TDSON |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 0.065 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.2V |
| Number of Elements per Chip | 2 |
| Transistor Material | Si |
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