Infineon HEXFET Type N-Channel MOSFET, 171 A, 150 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 25 units)*

$369.225

(exc. GST)

$406.15

(inc. GST)

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  • 1,075 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
25 - 50$14.769$369.23
75 - 100$14.372$359.30
125 +$14.075$351.88

*price indicative

RS Stock No.:
222-4611
Mfr. Part No.:
AUIRFP4568
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

171A

Maximum Drain Source Voltage Vds

150V

Package Type

TO-247

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5.9mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

151nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

517W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Height

5.31mm

Standards/Approvals

No

Width

20.7 mm

Length

15.87mm

Automotive Standard

AEC-Q101

The Infineon design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Advanced Planar Technology

Dual N Channel MOSFET Low On-Resistance

Logic Level Gate Drive

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