Dual N-Channel MOSFET Transistor & Diode, 8.8 A, 30 V, 8-Pin DFN2020 Infineon IRFHS8342TRPBF
- RS Stock No.:
- 220-7488
- Mfr. Part No.:
- IRFHS8342TRPBF
- Brand:
- Infineon
15000 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (In a Pack of 50)
$0.725
(exc. GST)
$0.797
(inc. GST)
Units | Per unit | Per Pack* |
---|---|---|
50 - 950 | $0.725 | $36.25 |
1000 - 1950 | $0.707 | $35.35 |
2000 + | $0.696 | $34.80 |
*price indicative
- RS Stock No.:
- 220-7488
- Mfr. Part No.:
- IRFHS8342TRPBF
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
The Infineon IRFHS8342 is strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface-mount power package
Low RDS(on) in a small package
Small outline
Wide availability from distribution partners
Industry standard qualification level
Standard pinout allows for drop in replacement
High power density
Compact form factor for space critical applications
Product qualification according to JEDEC standard
Industry standard surface-mount power package
Low RDS(on) in a small package
Small outline
Wide availability from distribution partners
Industry standard qualification level
Standard pinout allows for drop in replacement
High power density
Compact form factor for space critical applications
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 8.8 A |
Maximum Drain Source Voltage | 30 V |
Package Type | DFN2020 |
Series | HEXFET |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 0.016 O |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 20V |
Number of Elements per Chip | 2 |
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