Infineon HEXFET Type N-Channel MOSFET & Diode, 25 A, 30 V Enhancement, 8-Pin PQFN

RS Stock No.:: 220-7485
Mfr. Part No.:: IRFH7932TRPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET & Diode, 25 A, 30 V Enhancement, 8-Pin PQFN

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 4000 units)*

$3,432.00

(exc. GST)

$3,776.00

(inc. GST)

FREE delivery for orders over $60.00 ex GST

In Stock

8,000 unit(s) ready to ship from another location

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Units	Per unit	Per Reel*
4000 - 16000	$0.858	$3,432.00
20000 +	$0.772	$3,088.00

*price indicative

RS Stock No.:: 220-7485
Mfr. Part No.:: IRFH7932TRPBF
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	30V
	Package Type	PQFN
	Series	HEXFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3.3mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	34nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	3.4W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	6.1mm
	Height	1mm
	Width	5.1 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 30V
	Package Type PQFN
	Series HEXFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3.3mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 34nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 3.4W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 6.1mm
	Height 1mm
	Width 5.1 mm
	Automotive Standard No

Datasheet - IRFH7932TRPBF

The Infineon OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.

Very low RDS(ON) at 4.5V VGS

Low Gate Charge

Fully Characterized Avalanche Voltage and

Current

100% Tested for RG

Lead-Free (Qualified up to 260°C Reflow)

RoHS compliant (Halogen Free)

Low Thermal Resistance

Large Source Lead for more reliable Soldering

Infineon HEXFET Type N-Channel MOSFET & Diode, 25 A, 30 V Enhancement, 8-Pin PQFN

FREE delivery for orders over $60.00 ex GST

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