Dual N-Channel MOSFET Transistor & Diode, 12 A, 30 V, 8-Pin PQFN 3 x 3 Infineon IRFH3707TRPBF
- RS Stock No.:
- 220-7480
- Mfr. Part No.:
- IRFH3707TRPBF
- Brand:
- Infineon
On back order for despatch 25/12/2024, delivery within 10 working days from despatch date.
Price (ex. GST) Each (On a Reel of 4000)
$0.267
(exc. GST)
$0.294
(inc. GST)
Units | Per unit | Per Reel* |
|---|---|---|
| 4000 - 4000 | $0.267 | $1,068.00 |
| 8000 - 12000 | $0.262 | $1,048.00 |
| 16000 + | $0.256 | $1,024.00 |
*price indicative
- RS Stock No.:
- 220-7480
- Mfr. Part No.:
- IRFH3707TRPBF
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
The Infineon Strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface-mount package
Potential alternative to high-RDS(on) SuperSO8 package
Wide availability from distribution partners
Industry standard qualification level
Standard pinout allows for drop in replacement
Small form factor
Product qualification according to JEDEC standard
Industry standard surface-mount package
Potential alternative to high-RDS(on) SuperSO8 package
Wide availability from distribution partners
Industry standard qualification level
Standard pinout allows for drop in replacement
Small form factor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 12 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | PQFN 3 x 3 |
| Series | HEXFET |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 0.0124 O |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 20V |
| Number of Elements per Chip | 2 |
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