N-Channel MOSFET, 6 A, 950 V, 3-Pin TO-220 FP Infineon IPA95R1K2P7XKSA1
- RS Stock No.:
- 219-5990
- Mfr. Part No.:
- IPA95R1K2P7XKSA1
- Brand:
- Infineon
On back order for despatch 14/08/2024, delivery within 10 working days from despatch date.
Price (ex. GST) Each (In a Tube of 50)
$2.056
(exc. GST)
$2.262
(inc. GST)
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 100 | $2.056 | $102.80 |
| 150 - 200 | $2.001 | $100.05 |
| 250 + | $1.959 | $97.95 |
*price indicative
- RS Stock No.:
- 219-5990
- Mfr. Part No.:
- IPA95R1K2P7XKSA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
The Infineon designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.
Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 6 A |
| Maximum Drain Source Voltage | 950 V |
| Package Type | TO-220 FP |
| Series | CoolMOS™ P7 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 0.12 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Number of Elements per Chip | 1 |
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