Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 60 V Enhancement, 3-Pin TO-252 IPD90N06S4L03ATMA2

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$26.56

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$29.22

(inc. GST)

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10 - 620$2.656$26.56
630 - 1240$2.589$25.89
1250 +$2.55$25.50

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Packaging Options:
RS Stock No.:
215-2520
Mfr. Part No.:
IPD90N06S4L03ATMA2
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS-T2

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

150W

Typical Gate Charge Qg @ Vgs

170nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS®-T2 Power-Transistor has 60V maximum drain source voltage, N-Ch, Automotive MOSFET, with DPAK(TO-252) package.

N-channel - Enhancement mode

Automotive AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Ultra low RDSon

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