Infineon CoolMOS Type N-Channel MOSFET, 9.9 A, 600 V P, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

$68.10

(exc. GST)

$74.90

(inc. GST)

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  • 950 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
50 - 50$1.362$68.10
100 - 150$1.337$66.85
200 +$1.308$65.40

*price indicative

RS Stock No.:
217-2496
Mfr. Part No.:
IPAN60R650CEXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9.9A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

650mΩ

Channel Mode

P

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

20.5nC

Maximum Power Dissipation Pd

82W

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Length

16.1mm

Standards/Approvals

No

Height

29.87mm

Width

4.8 mm

Automotive Standard

No

The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.

Narrow margins between typical and max R DS(on)Reduced energy stored in output capacitance (E oss)

Good body diode ruggedness and reduced reverse recovery charge (Q rr)

Optimized integrated R g

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