Infineon SIPMOS Type P-Channel MOSFET, 620 mA, 60 V Enhancement, 3-Pin SC-59 BSR315PH6327XTSA1

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 50 units)*

$35.00

(exc. GST)

$38.50

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 2,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
50 - 700$0.70$35.00
750 - 1450$0.682$34.10
1500 +$0.672$33.60

*price indicative

Packaging Options:
RS Stock No.:
215-2469
Mfr. Part No.:
BSR315PH6327XTSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

620mA

Maximum Drain Source Voltage Vds

60V

Series

SIPMOS

Package Type

SC-59

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

800mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

6nC

Forward Voltage Vf

-1.2V

Maximum Power Dissipation Pd

0.5W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon SIPMOS® Small-Signal-Transistor P-channel enhancement mode Field-Effect Transistor (FET), -20V maximum drain source voltage with SOT-23 package type. The Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. The BSS84P is a p-channel enhancement mode MOSFET in a small surface mount package with superior switching performance. This product is particularly suited for low-voltage, low-current applications.

Enhancement mode

Logic level

Avalanche rated

Fast switching

Dv/dt rated

Pb-free lead-plating

Related links