Infineon OptiMOS 3 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-252

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 reel of 2500 units)*

$3,515.00

(exc. GST)

$3,867.50

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 2,500 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2500 - 10000$1.406$3,515.00
12500 +$1.265$3,162.50

*price indicative

RS Stock No.:
214-9027
Mfr. Part No.:
IPD082N10N3GATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

OptiMOS 3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.2mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

42nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

125W

Maximum Operating Temperature

175°C

Height

2.41mm

Width

6.22 mm

Standards/Approvals

No

Length

6.73mm

Automotive Standard

No

The Infineon 100V OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). Ideal for high-frequency switching and synchronous rectification. Potential Applications includes Class D audio amplifiers, Isolated DC-DC converters etc.

It has 175 °C operating temperature

Qualified according to JEDEC for target applications

Related links