N-Channel MOSFET, 80 A, 100 V, 3-Pin I2PAK Infineon IPI086N10N3GXKSA1

RS Stock No.:: 145-9306
Mfr. Part No.:: IPI086N10N3GXKSA1
Brand:: Infineon

N-Channel MOSFET, 80 A, 100 V, 3-Pin I2PAK Infineon IPI086N10N3GXKSA1

Available for back order.

Price (ex. GST) Each (In a Tube of 50)

$2.076

(exc. GST)

$2.284

(inc. GST)

Units	Per unit	Per Tube*
50 - 200	$2.076	$103.80
250 +	$1.868	$93.40

*price indicative

RS Stock No.:: 145-9306
Mfr. Part No.:: IPI086N10N3GXKSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	80 A
Maximum Drain Source Voltage	100 V
Series	OptiMOS™ 3
Package Type	I2PAK (TO-262)
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	15.4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	4.572mm
Number of Elements per Chip	1
Length	10.36mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	42 nC @ 10 V
Transistor Material	Si
Height	11.177mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V