Infineon HEXFET N-Channel MOSFET, 112 A, 40 V Enhancement, 9-Pin DirectFET AUIRL7736M2TR

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Subtotal (1 pack of 5 units)*

$29.53

(exc. GST)

$32.49

(inc. GST)

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Units
Per unit
Per Pack*
5 - 1195$5.906$29.53
1200 - 2395$5.76$28.80
2400 +$5.672$28.36

*price indicative

Packaging Options:
RS Stock No.:
214-8965
Mfr. Part No.:
AUIRL7736M2TR
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

112A

Maximum Drain Source Voltage Vds

40V

Series

HEXFET

Package Type

DirectFET

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

52nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

16V

Maximum Power Dissipation Pd

63W

Maximum Operating Temperature

175°C

Height

740μm

Length

6.35mm

Width

5.05mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced packaging platform to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques etc. The package allows dual sided cooling to maximize thermal transfer in automotive power systems.

Advanced Process Technology

Logic Level

High Power Density

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