Infineon HEXFET Type N-Channel MOSFET, 112 A, 40 V Enhancement, 9-Pin DirectFET

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Subtotal (1 reel of 4800 units)*

$13,267.20

(exc. GST)

$14,592.00

(inc. GST)

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  • Final 4,800 unit(s), ready to ship from another location
Units
Per unit
Per Reel*
4800 - 4800$2.764$13,267.20
9600 - 14400$2.712$13,017.60
19200 +$2.653$12,734.40

*price indicative

RS Stock No.:
214-8964
Mfr. Part No.:
AUIRL7736M2TR
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

112A

Maximum Drain Source Voltage Vds

40V

Package Type

DirectFET

Series

HEXFET

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

63W

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

52nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.35mm

Width

5.05 mm

Height

0.74mm

Automotive Standard

AEC-Q101

The Infineon combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced packaging platform to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques etc. The package allows dual sided cooling to maximize thermal transfer in automotive power systems.

Advanced Process Technology

Logic Level

High Power Density

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