Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-262

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 tube of 50 units)*

$112.20

(exc. GST)

$123.40

(inc. GST)

Add to Basket
Select or type quantity
Last RS stock
  • Final 5,250 unit(s), ready to ship from another location
Units
Per unit
Per Tube*
50 - 50$2.244$112.20
100 - 150$2.188$109.40
200 +$2.154$107.70

*price indicative

RS Stock No.:
214-4447
Mfr. Part No.:
IRF3205ZLPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-262

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

6.5mΩ

Maximum Power Dissipation Pd

170W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

110nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche

It is lead-free

Related links