Vishay EF Type N-Channel Power MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-263 SIHB125N60EF-GE3
- RS Stock No.:
- 204-7246
- Mfr. Part No.:
- SIHB125N60EF-GE3
- Brand:
- Vishay
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$38.46
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$42.305
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 745 | $7.692 | $38.46 |
| 750 - 1495 | $7.498 | $37.49 |
| 1500 + | $7.38 | $36.90 |
*price indicative
- RS Stock No.:
- 204-7246
- Mfr. Part No.:
- SIHB125N60EF-GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | EF | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 179W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.06mm | |
| Length | 14.61mm | |
| Width | 9.65mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series EF | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 179W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 4.06mm | ||
Length 14.61mm | ||
Width 9.65mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 600V Drain Source Voltage, 25A Continuous Drain Current - SIHB125N60EF-GE3
This power MOSFET is a high-voltage N-channel semiconductor device designed for switching and power-conversion roles in industrial electronics. It is intended for surface-mount use on power assemblies where robust voltage handling and elevated temperature tolerance are required, supporting applications that switch high voltages and substantial currents in automation and electrical systems.
Features and Benefits:
• 600V drain rating enables high-voltage switching capability • 25A continuous drain current supports substantial load currents • 125mΩ Rds(on) reduces conduction losses under load • 31nC typical gate charge minimises drive energy requirements • 179W power dissipation allows sustained power handling • 150°C maximum operating temperature supports high-temperature environments
Applications
• Suitable for high-voltage inverter stages in industrial drives • Ideal for power supplies requiring high breakdown voltage • Used with motor controllers handling tens of amperes • Can be used for relay replacement in solid-state switching • Used for power conversion in automation equipment
What gate voltage range is safe for switching the device?
The device accepts gate voltages up to 30V, specifying the maximum permissible gate-to-source potential for reliable operation.
How does package choice affect thermal performance?
The TO-263 package offers a large thermal pad and leads for heat conduction, aiding heat transfer to PCB copper and heatsinks to support the rated power dissipation.
What are the environmental limits for operation?
The component is specified to operate down to -55°C and up to 150°C, defining the allowable ambient and junction extremes for design margins.
How many pins are available for PCB layout considerations?
The part uses three pins, which determines footprint and connection arrangements for drain, source and gate on the PCB.
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