Vishay SiDR140DP Type N-Channel MOSFET, 100 A, 25 V Enhancement, 8-Pin SO-8 SIDR140DP-T1-RE3

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Subtotal (1 pack of 10 units)*

$32.14

(exc. GST)

$35.35

(inc. GST)

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Units
Per unit
Per Pack*
10 - 740$3.214$32.14
750 - 1490$3.134$31.34
1500 +$3.086$30.86

*price indicative

Packaging Options:
RS Stock No.:
204-7236
Mfr. Part No.:
SIDR140DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

25V

Package Type

SO-8

Series

SiDR140DP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.67mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

125W

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

113nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

6.15mm

Height

0.61mm

Width

5.15 mm

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 25 V (D-S) MOSFET has a top side cooling feature provides additional venue for thermal transfer. It has optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss.

100 % Rg and UIS tested

TrenchFET Gen IV power MOSFET

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